Preparation of ITO transparent conductive film by sol-gel method
来源期刊：中国有色金属学报(英文版)2006年第6期
论文作者：李芝华 任冬燕
文章页码：1358 - 1361
Key words：ITO film; sol-gel process; resistivity; transparency
Abstract: The ITO transparent conductive films were prepared on substrate of quartz glass by sol-gel method. The raw materials were nitrate indium, acetylacetone and the dopant of anhydrous chloride (SnCl4). The process from gel to crystalline film and the microstructure of the films were investigated by DTA-TG, XRD and SEM. The influence of preparation processes on the electricity performance of the films was also studied by four-probe apparatus. The results show that the crystallization process of ITO xerogel completes when the heat treatment temperature reaches 600 ℃. The ITO films possesses on vesicular structures accumulated by spherical particles, and both heat treatment temperature and cooling rate have important effects on the resistivity of ITO films.
