多晶氧化铍陶瓷上金刚石薄膜的生长

来源期刊：中国有色金属学报2009年第4期

论文作者：陈永勤 余志明 方梅 魏秋平 陈爽

文章页码：766 - 772

关键词：金刚石薄膜；氧化铍；热丝化学气相沉积；工艺参数；热导率

Key words：diamond film; berillia; hot filament chemical vapor deposition; process parameters; thermal conductivity

摘    要：采用热丝化学气相沉积(HFCVD)系统，以CH₄和H₂为反应气体，在多晶氧化铍陶瓷基体上沉积了金刚石薄膜。采用场发射扫描电子显微镜(FESEM)、原子力显微镜(AFM)和激光热物性测试仪进行检测分析，研究工艺参数对金刚石薄膜生长及膜/基复合体热学性能的影响。结果表明：随着CH₄浓度的增加(或CH₄浓度一定，反应气体总流量增加)，金刚石晶粒尺寸逐渐减小，膜/基复合体的热导率逐渐降低；当CH₄浓度为2%(体积分数)，流量为30 cm³/min，压强为1.33 kPa时，沉积的膜/基复合体的热导率最高，可达2.663 W/(cm·K)。

Abstract: The diamond films on berillia ceramic were deposited under changing conditions in hot filament chemical vapor deposition (HFCVD) system. The surface structures and morphologies were investigated by field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM), and the thermal conductivity of diamond film/berillia substrate composites were detected by laser-diathermometer. The results show that, with the increase of concentration of CH₄ or total gas flow, the grain size of diamond and the thermal conductivity of composites reduce. When the concentration of CH₄ is 2%, the total gas flow is 30 cm³/min and the pressure of the chamber is 1.33 kPa, the thermal conductivity of diamond and berillia composite can reach 2.663 W/(cm·K).

基金信息：粉末冶金国家重点实验室开放基金资助项目
湖南省研究生创新基金资助项目
中南大学贵重仪器开放共享基金资助项目